jz5b01918_si_001.pdf (1.11 MB)
Electronic Properties of Si–Hx Vibrational Modes at Si Waveguide Interface
journal contribution
posted on 2015-12-17, 09:52 authored by Muhammad Y. Bashouti, Peyman Yousefi, Jürgen Ristein, Silke H. ChristiansenAttenuated total reflectance (ATR)
and X-ray photoelectron spectroscopy
in suite with Kelvin probe were conjugated to explore the electronic
properties of Si–Hx vibrational
modes by developing Si waveguide with large dynamic detection range
compared with conventional IR. The Si 2p emission and work-function
related to the formation and elimination of Si–Hx bonds at Si surfaces are monitored based on the
detection of vibrational mode frequencies. A transition between various
Si–Hx bonds and thus related vibrational
modes is monitored for which effective momentum transfer could be
demonstrated. The combination of the aforementioned methods provides
for results that permit a model for the kinetics of hydrogen termination
of Si surfaces with time and advanced surface characterizing of hybrid-terminated
semiconducting solids.