When
surface states (SSs) form in topological insulators (TIs),
they inherit the properties of bulk bands, including the electron–hole
(e–h) asymmetry but with much more profound impacts. Here via
combining magneto-infrared spectroscopy with theoretical analysis,
we show that e–h asymmetry significantly modifies the SS electronic
structures when interplaying with the quantum confinement effect.
Compared with the case without e–h asymmetry, the SSs now bear
not only a band asymmetry, such as that in the bulk, but also a shift
of the Dirac point relative to the bulk bands and a reduction of the
hybridization gap of up to 70%. Our results signify the importance
of e–h asymmetry in the band engineering of TIs in the thin-film
limit.