posted on 2006-07-19, 00:00authored byHossam Haick, Patrick T. Hurley, Allon I. Hochbaum, Peidong Yang, Nathan S. Lewis
Silicon nanowires (Si NWs) modified by covalent Si−CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on−off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).