Efficient Quantum Dot Light-Emitting Diode Enabled by a Thick Inorganic CdS Interfacial Modification Layer

Ultrathin (∼10 nm) insulating polymer films are commonly employed as an interfacial modification layer (IML) to improve charge balance and suppress interfacial exciton quenching in quantum dot light-emitting diodes (QLEDs). However, because the thickness is smaller than the energy transfer distance, interfacial exciton quenching is only partially suppressed, leading to the degrading of device performance. In this work, a thick (35 nm) inorganic CdS film is developed to serve as the IML of CdSe quantum-dot-based QLED. Benefiting from relatively low electron mobility and well-matched energy level, the CdS IML can effectively improve charge balance. In addition, because the thickness is larger than the energy transfer distance, interfacial exciton quenching can be completely blocked. As a result, the QLEDs with CdS IML exhibit a maximum EQE of 21.2% and a peak current efficiency of 24.2 cd A^–1, which are about 1.32- and 1.4-fold higher than 16.1% and 17.3 cd A^–1 of the devices without CdS IML, respectively. Our work offers an efficient method to completely block interfacial exciton quenching, which may open a new avenue for developing higher-performance QLEDs.