posted on 2021-07-29, 20:04authored byMartino Rimoldi, Raimondo Cecchini, Claudia Wiemer, Emanuele Longo, Stefano Cecchi, Roberto Mantovan, Massimo Longo
Antimony
telluride (Sb2Te3) thin films were
obtained by metalorganic chemical vapor deposition (MOCVD). The films
were grown on crystalline Si(100) and Al2O3(0001)
and amorphous SiO2 and a-Al2O3 substrates.
Their structural properties were compared with those of the Sb2Te3/Si(111) heterostructure. In addition to the
effect of the substrate, the influence of pre- and post-growth thermal
annealing is also presented. The quality of the films is discussed
by comparing their morphological properties, such as roughness and
granularity, and ascertaining their crystallinity and their in-plane
and out-of-plane orientation.