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Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO3 Seed Layer on the Properties of RuO2/SrTiO3/Ru Capacitors for Dynamic Random Access Memory Applications

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posted on 12.11.2018, 00:00 by Sang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, Dae Seon Kwon, Dong-Gun Kim, Soon Hyung Cha, Seong Tak Cho, Cheol Seong Hwang
The atomic layer deposition process of SrTiO3 (STO) films at 230 °C was studied with Sr­(iPr3Cp)2 and Ti­(CpMe5)­(OMe)3 (Pr, Cp, and Me are propyl, cyclopentadienyl, and methyl groups, respectively) on Ru substrates. The growth behavior and properties of STO films grown at 230 °C were compared with those deposited at 370 °C. With the limited over-reaction of the Sr precursor during the initial growth stage at a lower temperature, the cation composition was more controllable, and the surface morphology after crystallization annealing at 650 °C had more uniform grains with fewer defects. Here, the excess reaction of the Sr precursor means the chemical-vapor-deposition-like growth of the SrO component mediated through the thermal decomposition of the adsorbed Sr precursor molecules. It was by the reaction of the Sr precursor with the oxygen supplied from the partly oxidized Ru substrate. The second STO was grown at 370 °C (main layer) on the annealed first STO layer (crystallized seed layer) to lead to the in situ crystallization of the main layer. Due to the improved microstructure of STO films induced by the seed layer deposited at 230 °C, the bulk dielectric constant of 167 was obtained for the main layer, which was higher than the value of 101 where the seed layer was deposited at 370 °C, even though the crystallization annealing condition of the seed layer and the deposition condition of the main layer were consistent. The seed layer grown at 230 °C, however, had a lower dielectric constant of only ∼49, whereas the high-temperature seed layer had a dielectric constant of ∼106. Therefore, the low-temperature seed layer posed a severe limitation in acquiring an advanced capacitor property with the involvement of a low-dielectric interfacial layer.

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