American Chemical Society
mz3c00517_si_001.pdf (1.73 MB)

Effect of Fluorination Position on the Crystalline Structure and Stretchability of Intrinsically Stretchable Polymer Semiconductors

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journal contribution
posted on 2023-11-06, 20:12 authored by Hyerin Shin, Yejin Kim, Mingi Sung, Hyungju Ahn, Hyeonjin Yoo, Kwang Hyun Park, Sung Ho Song, Junghoon Lee, Byoung Hoon Lee
A clear understanding of the structure–property relationship of intrinsically stretchable polymer semiconductors (ISPSs) is essential for developing high-performance polymer-based electronics. Herein, we investigate the effect of the fluorination position on the crystalline structure, charge-carrier mobility, and stretchability of polymer semiconductors based on a benzodithiophene-co-benzotriazole configuration. Although four different polymer semiconductors showed similar field-effect mobilities for holes (μ ≈ 0.1 cm2 V–1 s–1), polymer semiconductors with nonfluorinated backbones exhibited improved thin-film stretchability confirmed with crack onset strain (εc ≈ 20%–50%) over those of fluorinated counterparts (εc ≤ 10%). The enhanced stretchability of polymer semiconductors with a nonfluorinated backbone is presumably due to the higher face-on crystallite ratio and π–π stacking distance in the out-of-plane direction than those of the other polymer semiconductors. These results provide new insights into how the thin-film stretchability of polymer semiconductors can be improved by using precise molecular tailoring without deteriorating electrical properties.