Easily Processable Highly Ordered Langmuir-Blodgett Films of Quaterthiophene Disiloxane Dimer for Monolayer Organic Field-Effect Transistors
journal contributionposted on 23.12.2014, 00:00 by Alexey S. Sizov, Daniil S. Anisimov, Elena V. Agina, Oleg V. Borshchev, Artem V. Bakirov, Maxim A. Shcherbina, Souren Grigorian, Vladimir V. Bruevich, Sergei N. Chvalun, Dmitry Yu. Paraschuk, Sergei A. Ponomarenko
Self-assembly of highly soluble water-stable tetramethyldisiloxane-based dimer of α,α′-dialkylquaterthiophene on the water–air interface was investigated by Langmuir, grazing incidence X-ray diffraction, and X-ray reflectivity techniques. The conditions for formation of very homogeneous crystalline monolayer Langmuir-Blodgett (LB) films of the oligomer were found. Monolayer organic field-effect transistors (OFETs) based on these LB films as a semiconducting layer showed hole mobilities up to 3 × 10–3 cm2/(V s), on–off ratio of 105, small hysteresis, and high long-term stability. The electrical performance of the LB films studied is close to that for the same material in the bulk or in the monolayer OFETs prepared from water vapor sensitive chlorosilyl derivatives of quaterthiophene by self-assembling from solution. These findings show high potential of disiloxane-based LB films in monolayer OFETs for large-area organic electronics.