Doped GNR p–n Junction as High Performance NDR and Rectifying Device
journal contributionposted on 2012-08-30, 00:00 authored by Anup Pramanik, Sunandan Sarkar, Pranab Sarkar
On the basis of density functional theory and nonequilibrium Green’s function technique, we have presented theoretical results on transport properties of B- and N-doped aGNR p–n junction. The current–voltage characteristic of this system indicates robust negative differential resistance (NDR) behavior of it. Meanwhile, that p–n junction diode can be utilized as a highly efficient voltage rectifier. The calculations also reveal that the voltage rectifying efficiency can be highly enhanced by forming a tandem diode by connecting two single diodes in series. The variation of transport properties on the width of aGNR is also investigated. The NDR phenomena as well as the rectifying property can be well explained on the basis of relative shifting of discrete energy states of the conjugate system with applied bias, which in turn explains very strong coupling between the p and n regions of the diode.