posted on 2024-02-23, 13:09authored byYing Huang, Yunqi Xu, Kun Liu, Yubin Fu, Antonio Gaetano Ricciardulli, Faxing Wang, Sheng Yang, Ji Ma, Mengmeng Li, Zhengfang Qian, Renheng Wang, Panpan Zhang
The design of donor–acceptor (D–A) conjugated
polymers
with narrow bandgaps remains a big challenge for achieving high-performance
near-infrared (NIR) phototransistors. Herein, we report a novel D–A
conjugated polymer (denoted as TBOPV-DT) based on a thiophene-fused
benzodifurandione-based oligo(p-phenylenevinylene)
(TBOPV) acceptor in conjugation with a 3,3′-dialkoxy-2,2′-dithiophene
(DT) donor. Benefiting from the alkoxylation of the donor units, the
TBOPV-DT conjugated polymer exhibits broad second NIR absorption and
a narrow bandgap of 0.65 eV. When being used as the channel material
in field-effect transistors, the TBOPV-DT conjugated polymer shows
p-type semiconducting behavior with a hole mobility of 0.16 cm2 V–1 s–1. Besides, the
resulting single-component polymer phototransistor displays ultrahigh
sensitivity to a broad range of wavelengths (850–1450 nm) and
a record-high photoresponsivity of 1.9 × 105 A W–1. Moreover, the fast rise and decay response times
of 53 and 317 ms, respectively, are comparable to those of state-of-the-art
two-dimensional materials. This work sheds light on designing new
narrow-bandgap D–A conjugated polymers with molecular precision
and paves the way for the development of future high-performance optoelectronics.