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Distinctive Field-Effect Transistors and Ternary Inverters Using Cross-Type WSe2/MoS2 Heterojunctions Treated with Polymer Acid
journal contribution
posted on 2020-07-30, 03:29 authored by Jun Young Kim, Hyeon Jung Park, Sang-hun Lee, Changwon Seo, Jeongyong Kim, Jinsoo JooThe
electrical and optical characteristics of two-dimensional (2D)
transition-metal dichalcogenides (TMDCs) can be improved by surface
modification. In this study, distinctive field-effect transistors
(FETs) were realized by forming cross-type 2D WSe2/MoS2 p–n heterojunctions through surface treatment using
poly(methyl methacrylate-co-methacrylic acid) (PMMA-co-PMAA). The FETs were applied to new ternary inverters
as multivalued logic circuits (MVLCs). Laser confocal microscope photoluminescence
spectroscopy indicated the generation of trions in the WSe2 and MoS2 layers, and the intensity decreased after PMMA-co-PMAA treatment. For the cross-type WSe2/MoS2 p–n heterojunction FETs subjected to PMMA-co-PMAA treatment, the channel current and the region of
anti-ambipolar transistor characteristics increased considerably,
and ternary inverter characteristics with three stable logic states,
“1”, “1/2”, and “0”, were
realized. Interestingly, the intermediate logic state 1/2, which results
from the negative differential transconductance characteristics, was
realized by the turn-on of all component FETs, as the current of the
FETs increased after PMMA-co-PMAA treatment. The
electron-rich carboxyl acid moieties in PMMA-co-PMAA
can undergo coordination with the metal Mo or W atoms present in the
Se or S vacancies, respectively, resulting in the modulation of charge
density. These features yielded distinctive FETs and ternary inverters
for MVLCs using cross-type WSe2/MoS2 heterojunctions.