posted on 2020-06-01, 18:34authored byXiaocheng Zhou, Zhuhua Zhang, Wanlin Guo
Single
photon sources hold great promise in quantum information
technologies and are often materialized by single atoms, quantum dots,
and point defects in dielectric materials. Yet, these entities are
vulnerable to annealing and chemical passivation, ultimately influencing
the stability of photonic devices. Here, we show that topologically
stable dislocations in transition metal dichalcogenide monolayers
can act as single photon sources, as supported by calculated defect
levels, diploe matrix elements for transition, and excitation lifetimes
with first-principles. The emission from dislocations can range from
0.48 to 1.29 eV by varying their structure, charge state, and chemical
makeup in contrast to the visible range provided by previously reported
sources. Since recent experiments have controllably created dislocations
in monolayer materials, these results open the door to utilizing robustly
stable defects for quantum computing.