American Chemical Society
nl9b05305_si_001.pdf (1004.02 kB)

Dislocations as Single Photon Sources in Two-Dimensional Semiconductors

Download (1004.02 kB)
journal contribution
posted on 2020-06-01, 18:34 authored by Xiaocheng Zhou, Zhuhua Zhang, Wanlin Guo
Single photon sources hold great promise in quantum information technologies and are often materialized by single atoms, quantum dots, and point defects in dielectric materials. Yet, these entities are vulnerable to annealing and chemical passivation, ultimately influencing the stability of photonic devices. Here, we show that topologically stable dislocations in transition metal dichalcogenide monolayers can act as single photon sources, as supported by calculated defect levels, diploe matrix elements for transition, and excitation lifetimes with first-principles. The emission from dislocations can range from 0.48 to 1.29 eV by varying their structure, charge state, and chemical makeup in contrast to the visible range provided by previously reported sources. Since recent experiments have controllably created dislocations in monolayer materials, these results open the door to utilizing robustly stable defects for quantum computing.