Direct Measurement of the Tunable Electronic Structure of Bilayer MoS2 by Interlayer Twist
journal contributionposted on 04.02.2016, 16:28 by Po-Chun Yeh, Wencan Jin, Nader Zaki, Jens Kunstmann, Daniel Chenet, Ghidewon Arefe, Jerzy T. Sadowski, Jerry I. Dadap, Peter Sutter, James Hone, Richard M. Osgood
Using angle-resolved photoemission on micrometer-scale sample areas, we directly measure the interlayer twist angle-dependent electronic band structure of bilayer molybdenum-disulfide (MoS2). Our measurements, performed on arbitrarily stacked bilayer MoS2 flakes prepared by chemical vapor deposition, provide direct evidence for a downshift of the quasiparticle energy of the valence band at the Brillouin zone center (Γ̅ point) with the interlayer twist angle, up to a maximum of 120 meV at a twist angle of ∼40°. Our direct measurements of the valence band structure enable the extraction of the hole effective mass as a function of the interlayer twist angle. While our results at Γ̅ agree with recently published photoluminescence data, our measurements of the quasiparticle spectrum over the full 2D Brillouin zone reveal a richer and more complicated change in the electronic structure than previously theoretically predicted. The electronic structure measurements reported here, including the evolution of the effective mass with twist-angle, provide new insight into the physics of twisted transition-metal dichalcogenide bilayers and serve as a guide for the practical design of MoS2 optoelectronic and spin-/valley-tronic devices.
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interlayer twist anglevalence band structuretwist angleDirect Measurementphotoluminescence dataTunable Electronic Structure120 meVBilayer MoS 2band structureMoS 2 optoelectronicstructure measurementsvalence bandbilayer MoS 2 flakesquasiparticle spectrum2 D Brillouin zonechemical vapor depositionquasiparticle energy