posted on 2018-03-09, 00:00authored byYang Zhang, Yang Wu, Xiaoxin Wang, Lei Ying, Rahul Kumar, Zongfu Yu, Eric R. Fossum, Jifeng Liu, Gregory Salamo, Shui-Qing Yu
Capturing
single photons through light–matter interactions
is a fascinating and important topic for both fundamental research
and practical applications. The light–matter interaction enables
the transfer of the energy of a single photon (∼1 eV) to a
bound electron, making it free to move either in the crystal lattice
or in the vacuum. In conventional single photon detectors (e.g., avalanche
photodiodes), this free electron triggers a carrier multiplication
process which amplifies the ultraweak signal to a detectable level.
Despite their popularity, the timing jitter of these conventional
detectors is limited to tens of picoseconds, mainly attributed to
a finite velocity of carriers drifting through the detectors. Here
we propose a new type of single photon detector where a quantum dot,
embedded in a single-electron transistor like device structure, traps
a photogenerated charge and gives rise to a sizable voltage signal
(∼7 mV per electron or hole by simulation) on a nearby sense
probe through capacitive coupling (with a capacitance ∼ aF).
Possible working modes of the proposed detector are theoretically
examined. Owing to a small lateral dimension of the quantum dot, detailed
analyses reveal that the intrinsic timing jitter of the proposed detector
is in the femtosecond to subpicosecond range, and the intrinsic dark
count rate is negligible up to moderately high temperatures. These
figures of merit are orders of magnitude superior to those of the
state-of-the-art single photon detectors work in the same spectral
range, making the proposed detector promising for timing-sensitive
and quantum information applications.