American Chemical Society
Browse

Designing a Lower Band Gap Bulk Ferroelectric Material with a Sizable Polarization at Room Temperature

Download (615.87 kB)
journal contribution
posted on 2018-04-20, 00:00 authored by Shyamashis Das, Somnath Ghara, Priya Mahadevan, A. Sundaresan, J. Gopalakrishnan, D. D. Sarma
A low band gap ferroelectric material with a sizable polarization at ambient conditions would constitute an ideal photovoltaic material to harvest solar energy because of its efficient polarization-driven charge carrier separation. We achieve this elusive goal by codoping a Jahn–Teller Mn3+ and Nb5+ pair for two Ti4+ ions in ferroelectric BaTiO3. Representing a charge-neutral dipole doping, this approach achieves for the first time a bulk ferroelectric oxide with the lowest band gap of 1.66 eV with a sizable polarization of nearly 70% of BaTiO3. We contrast this with the analogous system with Mn3+ replaced by the non-Jahn–Teller Fe3+ (3d5) ion, which even at a much lower level of doping reduces the polarization to 25% without reducing the band gap significantly, establishing the efficacy of the present strategy.

History