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Designing a Lower Band Gap Bulk Ferroelectric Material with a Sizable Polarization at Room Temperature

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posted on 2018-04-20, 00:00 authored by Shyamashis Das, Somnath Ghara, Priya Mahadevan, A. Sundaresan, J. Gopalakrishnan, D. D. Sarma
A low band gap ferroelectric material with a sizable polarization at ambient conditions would constitute an ideal photovoltaic material to harvest solar energy because of its efficient polarization-driven charge carrier separation. We achieve this elusive goal by codoping a Jahn–Teller Mn<sup>3+</sup> and Nb<sup>5+</sup> pair for two Ti<sup>4+</sup> ions in ferroelectric BaTiO<sub>3</sub>. Representing a charge-neutral dipole doping, this approach achieves for the first time a bulk ferroelectric oxide with the lowest band gap of 1.66 eV with a sizable polarization of nearly 70% of BaTiO<sub>3</sub>. We contrast this with the analogous system with Mn<sup>3+</sup> replaced by the non-Jahn–Teller Fe<sup>3+</sup> (3d<sup>5</sup>) ion, which even at a much lower level of doping reduces the polarization to 25% without reducing the band gap significantly, establishing the efficacy of the present strategy.

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