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Download fileDeposition-Temperature-Mediated Selective Phase Transition Mechanism of VO2 Films
journal contribution
posted on 2020-07-22, 21:32 authored by Dooyong Lee, Donghyuk Yang, Hyegyeong Kim, Jiwoong Kim, Sehwan Song, Kyoung Soon Choi, Jong-Seong Bae, Jouhahn Lee, Jaekwang Lee, Yunsang Lee, Jiafeng Yan, Jaeyong Kim, Sungkyun ParkA clear experimental explanation
of the contribution of Mott and
Peierls transitions to the insulator–metal transition (IMT)
characteristics in vanadium dioxide (VO2) is still lacking.
Examining the crystal and electronic structures of epitaxial VO2 films grown at various deposition temperatures, a Mott or
a Peierls transition was observed. The VO2 film deposited
at 500 °C showed suppressed Peierls transition characteristics
because of the large in-plane compressive strain in the insulating
phase. The VO2 films deposited at 600 and 650 °C had
a higher IMT temperature because of the relaxation of both the in-plane
and out-of-plane strain, and there were abundant V4+ states.
Therefore, it was related to a collaborative Mott–Peierls transition.
Finally, the VO2 film deposited at 720 °C showed a
suppressed Mott transition because of the abundance of V3+ states in the insulating phase. Furthermore, an analysis of the
electronic structure of the insulating and metallic phases using in situ X-ray photoelectron spectroscopy and X-ray absorption
spectroscopy provide a complete band diagram to support the above
explanation of the deposition-temperature-dependent IMT characteristics.
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Keywords
VO 2 FilmsIMT temperatureepitaxial VO 2 filmsX-ray absorption spectroscopyvanadium dioxidePeierls transitionsout-of-plane strainPeierls transitiondeposition temperaturesX-ray photoelectron spectroscopyVO 2phasedeposition-temperature-dependent IM...Peierls transition characteristicsVO 2 filmVO 2 filmsPhase Transition Mechanismband diagramMott transition