posted on 2016-02-23, 00:00authored byTakashi Tachikawa, Tomoya Ochi, Yasuhiro Kobori
The performance of semiconductor
materials in solar water splitting
and other applications is strongly influenced by the structure-related
dynamics of charge carriers in these materials. In this study, we
assessed the trapping, recombination, and surface reactions of photogenerated
and electrically injected charges on specific facets of the promising
visible active photocatalyst BiVO4 by using single-particle
photoluminescence (PL) spectroscopy. Evaluation of the electric-potential-induced
PL properties and the PL response to charge scavengers revealed that
the visible PL bands observed during visible laser irradiation originate
from radiative recombination between holes trapped at the intraband
states above the valence band and mobile (free or shallowly trapped)
electrons. Furthermore, the trapped holes are preferentially located
on the lateral {110} facets of the BiVO4 crystal, while
the electrons are uniformly distributed over the crystal. The methodology
described in this study thus provides us with a unique opportunity
to explore whether or not the crystal faces affect the charge carrier
dynamics in the photocatalysis and the photoelectrocatalysis.