Hexagonal
boron nitride (h-BN) holds great potential for applications
due to its unique electronic properties and high chemical stability.
Practical applications of h-BN, however, rely on the growth of large-scale,
high-quality samples, for which an adequate understanding of the growth
mechanism is critically important. In this work, we study the nucleation
of h-BN on the Ni(111) surface by density functional theoretical calculations.
Our results reveal a novel structural crossover from a chain-like
BN cluster to an sp2-bonded honeycomb network at the very
beginning of growth. This structural transition occurs in clusters
with a critical size of 8 BN pairs, beyond which the honeycomb structure
is energetically preferred. After that, the growth proceeds in a downhill
manner till a full coverage of h-BN on the Ni surface, driven by continuous
reduction in energy of the BN clusters with feeding BN pairs. The
critical size can be controlled by tuning chemical potentials. Our
results also present that lattice defects, such as 4- and 5-membered
rings, are higher in energy and, thus, disfavored in the growth. This
work not only explains the formation of high-quality BN sheets but
also opens a way to rationally control the synthesis of h-BN by selecting
appropriate substrates. The atomistic understandings of nucleation
of h-BN are extendable to other two-dimensional materials.