Copper Vanadate (Cu₃V₂O₈): (Mo, W) Doping Insights to Enhance Performance as an Anode for Photoelectrochemical Water Splitting

Molybdenum (Mo) and tungsten (W) doping in copper vanadate (Cu₃V₂O₈) gives important insights into the modulation of carrier mobility and charge separation efficiency. Mo and W atoms have more valence electrons than vanadium­(V), providing extra electrons to the host lattice of Cu₃V₂O₈ (CVO) resulting in raising the Fermi level wherein impurity energy levels will act as donors. Doped samples have shown current densities of ∼0.6 mA cm^–2, which is 3 times higher than that of pristine CVO, i.e., 0.18 mA cm^–2. Mo-doped CVO showed an excellent stability for 4 h with 6.8% loss in current density.