We synthesized a
series of new intrinsically stretchable block
copolymers (BCPs) in linear AB-type, ABA-type, and star-shaped architectures
composed of oligosaccharide (MH) and flexible poly(n-butyl acrylate) (PBA) blocks for the application in field-effect
transistor memory. The BCP thin films are used as the charge trapping
layers in the memory devices where the BCPs phase separate into ordered
MH microdomains in soft PBA matrices. The MH microdomain works as
the charge-trapping sites while the soft PBA matrix provides a stretchability.
In particular, the BCPs of the ABA-type and star-shaped architectures
with the end MH blocks not only show superior memory performances
but also form physical networks that impart mechanical resilience
to the thin films such that they can endure 100% strain without formation
of cracks. The mobilities and the memory windows of the devices are
nearly constant even when the charge trapping layers are stretched
and released at 50% strain for 1000 cycles. This work highlights the
importance of the molecular architectures on the BCPs intended for
stretchable electronic materials.