Control and Detection of Organosilane Polarization on Nanowire Field-Effect Transistors
journal contributionposted on 03.04.2020, 16:49 by M. C. Lin, C. J. Chu, L. C. Tsai, H. Y. Lin, C. S. Wu, Y. P. Wu, Y. N. Wu, D. B. Shieh, Y. W. Su, C. D. Chen
We demonstrated control and detection of UV-induced 3-aminopropyltriethoxysilane (APTES) polarization using silicon nanowire field-effect transistors made by top-down lithograph technology. The electric dipole moment in APTES films induced by UV-illumination was shown to produce negative effective charges. When individual dipoles were aligned with an externally applied electric field, the collective polarization can prevail over the UV-induced charges in the wires and give rise to an abnormal resistance enhancement in n-type wires. Real-time detection of hybridization of 15-mer poly-T/poly-A DNA molecules was performed, and the amount of hybridization-induced charges in the silicon wire was estimated. Based on these results, detection sensitivity of the wire sensors was discussed.
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resistance enhancementOrganosilane Polarizationhybridization-induced chargesn-type wirespolarizationNanowire Field-Effect TransistorsAPTES filmsUV-induced 3- aminopropyltriethoxysilaneDNAdetection sensitivityReal-time detectiontop-down lithograph technologywire sensorssilicon wireUV-induced chargessilicon nanowire field-effect transistors