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Download fileConstruction of Bi2O2Se/Bi2Se3 Van Der Waals Heterostructures for Self-Powered and Broadband Photodetectors
journal contribution
posted on 2022-03-08, 20:33 authored by Ming Yu, Chaocheng Fang, Jianfu Han, Wenliang Liu, Shengmei Gao, Kai HuangDue to its superior carrier mobility
and high air stability, the
emerging two-dimensional (2D) layered bismuth oxyselenide (Bi2O2Se) nanosheets have attracted extensive attention,
showing great potential for applications in the electronic and optoelectronic
fields. However, a high mobility easily leads to a high dark current,
seriously restricting optoelectronic applications, especially in the
field of photodetectors. In this paper, we report a high-quality Van
der Waals (vdWs) Bi2O2Se/Bi2Se3 heterostructure on a fluorophlogopite substrate, exhibiting
excellent photodiode characteristics. By means of the effective separation
of photogenerated electrons and holes by a junction barrier at the
interface, the current on/off ratio is up to about 3 × 103 under 532 nm laser illumination with zero bias. In addition,
the photodetector not only achieves a fast response speed of 41 ms
but also has a broadband photoresponse from 532 to 1450 nm (visible–NIR).
Additionally, the responsivity can reach 0.29 A/W, and the external
quantum efficiency exceeds 69% when the device operates in the reverse
bias condition. The results indicate that the Bi2O2Se/Bi2Se3 vdWs heterostructure has great
potential for self-powered, broadband, and fast photodetection applications.
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superior carrier mobilitylayered bismuth oxyselenidefast response speedattracted extensive attention3 × 10reverse bias conditionhigh air stability3 </ sub2 </ subshowing great potentialfast photodetection applications3 </ suphigh dark currentbroadband photodetectors duegreat potentialzero biasresults indicatereach 0photogenerated electronsoptoelectronic fieldsjunction barrierfluorophlogopite substrateemerging twoeffective separationdevice operatesbroadband photoresponse41 ms1450 nm