Photonic
transistor memory has received increasing attention as
next-generation optoelectronic devices for light fidelity (Li-Fi)
application due to the attractive advantages of ultra-speed, high
security, and low power consumption. However, most transistor-type
photonic memories developed to date still rely on electrical bias
for operation, imposing certain limits on data transmission efficiency
and energy consumption. In this study, the dual manipulation of “photo-writing”
and “photo-erasing” of a novel photonic transistor memory
is successfully realized by cleverly utilizing the complementary light
absorption between the photoactive material, n-type BPE-PTCDI, in
the active channel and the hybrid floating gate, CH3NH3PbBr3/poly(2-vinylpyridine). The fabricated device
not only can be operated under the full spectrum but also shows stable
switching cycles of photo-writing (PW)–reading (R)–photo-erasing
(PE)–reading (R) (PW–R–PE–R) with a high
memory ratio of ∼104, and the memory characteristics
possess a stable long-term retention of >104 s. Notably,
photo-erasing only requires 1 s light illumination. Due to the fully
optical functionality, the rigid gate electrode is removed and a novel
two-terminal flexible photonic memory is fabricated. The device not
only exhibits stable electrical performance after 1000 bending cycles
but also manifests a multilevel functional behavior, demonstrating
a promising potential for the future development of photoactive electronic
devices.