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Combinatorial Atmospheric Pressure Chemical Vapor Deposition (cAPCVD): A Route to Functional Property Optimization

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journal contribution
posted on 21.12.2011, 00:00 by Andreas Kafizas, Ivan P. Parkin
We demonstrate how combinatorial atmospheric pressure chemical vapor deposition (cAPCVD) can be used as a synthetic tool for rapidly optimizing the functional properties of thin-films, by analyzing the self-cleaning properties of tungsten doped anatase as an example. By introducing reagents at separate points inside the reactor, a tungsten/titanium compositional gradient was formed and a diverse range of film growth conditions were obtained. By partially mixing the metal sources, a combinatorial film with a compositional profile that varied primarily in the lateral plane was synthesized. A combinatorial thin-film of anatase TiO2 doped with an array of tungsten levels as a solid solution ranging from 0.38–13.8 W/Ti atom % was formed on a single glass substrate. The compositional–functional relationships were understood through comprehensively analyzing combinatorial phase space, with 200 positions investigated by high-throughput methods in this study. Physical and functional properties, and their compositional dependencies, were intercorrelated. It was found that increases in photocatalytic activity and conductivity were most highly dependent on film crystallinity within the 0.38–13.8 atom % W/Ti doping regime. However, enhancements in photoinduced surface wetting were primarily dependent on increases in preferred growth in the (211) crystal plane.