posted on 2021-05-11, 19:03authored byKuan-Chun Chen, Mu-Huai Fang, Wen-Tse Huang, Mikołaj Kamiński, Natalia Majewska, Tadeusz Leśniewski, Sebastian Mahlik, Grzegorz Leniec, Sławomir
M. Kaczmarek, Chia-Wei Yang, Kuang-Mao Lu, Hwo-Shuenn Sheu, Ru-Shi Liu
A chemical
and mechanical pressure-induced photoluminescence tuning
method was developed through the structural evolution and hydrostatic
pressure involving phase transition. A series of Ga1.98–xAlxO3:0.02Cr3+ phosphors were synthesized. Structural evolution reveals
a crystal phase change with the incorporation of Al ions. The luminescent
analysis shows the broad-to-sharp emission process with a high internal
quantum efficiency value (>90%). The high-pressure study reveals
the
emission from the exchange-coupled Cr3+ pairs and the phase
transition under high pressure. Electron paramagnetic resonance indicates
the distortion in the microstructures of the emission center. Finally,
an ultra-broadband phosphor-converted light-emitting diode is achieved
by utilizing the mixture of Ga1.18Al0.8O3:0.02Cr3+ and Ga1.18Sc0.8O3:0.02Cr3+ phosphors with a bandwidth of 209
nm and an output power of 119 mW. This study provides insights into
the effect of chemical and mechanical pressure on the Cr3+-doped materials and the development of high-quality near-infrared
luminescent materials.