Charge Transport in Dual Gated Bilayer Graphene with Corbino Geometry
journal contributionposted on 10.11.2010, 00:00 by Jun Yan, Michael S. Fuhrer
The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a two-channel conductance model including parallel thermal activation and variable range hopping channels, which gives the electric-field-dependent band gap whose magnitude is found to be in good agreement with infrared absorption experiments. Low-temperature transport is similar to that seen in previous studies of dual-gated bilayer graphene with edges, suggesting that edge transport does not play an important role.