am6b02792_si_001.pdf (944.69 kB)
Download fileCharacterization of ZnO Interlayers for Organic Solar Cells: Correlation of Electrochemical Properties with Thin-Film Morphology and Device Performance
journal contribution
posted on 2016-06-30, 00:00 authored by Kai-Lin Ou, Ramanan Ehamparam, Gordon MacDonald, Tobias Stubhan, Xin Wu, R. Clayton Shallcross, Robin Richards, Christoph J. Brabec, S. Scott Saavedra, Neal R. ArmstrongThis report focuses on the evaluation
of the electrochemical properties of both solution-deposited sol–gel
(sg-ZnO) and sputtered (sp-ZnO) zinc oxide thin films, intended for
use as electron-collecting interlayers in organic solar cells (OPVs).
In the electrochemical studies (voltammetric and impedance studies),
we used indium–tin oxide (ITO) over coated with either sg-ZnO
or sp-ZnO interlayers, in contact with either plain electrolyte solutions,
or solutions with probe redox couples. The electroactive area of exposed
ITO under the ZnO interlayer was estimated by characterizing the electrochemical
response of just the oxide interlayer and the charge transfer resistance
from solutions with the probe redox couples. Compared to bare ITO,
the effective electroactive area of ITO under sg-ZnO films was ca.
70%, 10%, and 0.3% for 40, 80, and 120 nm sg-ZnO films. More compact
sp-ZnO films required only 30 nm thicknesses to achieve an effective
electroactive ITO area of ca. 0.02%. We also examined the electrochemical
responses of these same ITO/ZnO heterojunctions overcoated with device
thickness pure poly(3-hexylthiophehe) (P3HT), and donor/acceptor blended
active layers (P3HT:PCBM). Voltammetric oxidation/reduction of pure
P3HT thin films on ZnO/ITO contacts showed that pinhole pathways exist
in ZnO films that permit dark oxidation (ITO hole injection into P3HT).
In P3HT:PCBM active layers, however, the electrochemical activity
for P3HT oxidation is greatly attenuated, suggesting PCBM enrichment
near the ZnO interface, effectively blocking P3HT interaction with
the ITO contact. The shunt resistance, obtained from dark current–voltage
behavior in full P3HT/PCBM OPVs, was dependent on both (i) the porosity
of the sg-ZnO or sp-ZnO films (as revealed by probe molecule electrochemistry)
and (ii) the apparent enrichment of PCBM at ZnO/P3HT:PCBM interfaces,
both effects conveniently revealed by electrochemical characterization.
We anticipate that these approaches will be applicable to a wider
array of solution-processed interlayers for “printable”
solar cells.