Bipolar Electric-Field Switching of Perpendicular Magnetic Tunnel Junctions through Voltage-Controlled Exchange Coupling
journal contributionposted on 04.01.2022, 21:14 by Delin Zhang, Mukund Bapna, Wei Jiang, Duarte Sousa, Yu-Ching Liao, Zhengyang Zhao, Yang Lv, Protyush Sahu, Deyuan Lyu, Azad Naeemi, Tony Low, Sara A. Majetich, Jian-Ping Wang
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier of the ferromagnetic layer via the electric field effect and efficiently switches p-MTJs only with a unipolar behavior. Here, we demonstrate a bipolar electric field effect switching of 100 nm p-MTJs with a synthetic antiferromagnetic free layer through voltage-controlled exchange coupling (VCEC). The switching current density, ∼1.1 × 105 A/cm2, is 1 order of magnitude lower than that of the best-reported spin-transfer torque devices. Theoretical results suggest that the electric field induces a ferromagnetic–antiferromagnetic exchange coupling transition of the synthetic antiferromagnetic free layer and generates a fieldlike interlayer exchange coupling torque, which causes the bidirectional magnetization switching of p-MTJs. These results could eliminate the major obstacle in the development of spin memory devices beyond their embedded applications.
Read the peer-reviewed publication
theoretical results suggestresults could eliminateferromagnetic layer viacontrolled exchange couplingswitching current densitybidirectional magnetization switchingtransfer torque devicesefficiently switches p100 nm p1 × 10electric field induceselectric field effect5 </ supfield switchingbipolar electriclogic devices∼ 11 ordervcec ).unipolar behaviorreported spinmajor obstaclemagnitude lowerextensive applicationsembedded applicationsefficient memory