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Bidirectional Growth of Indium Phosphide Nanowires
journal contribution
posted on 2012-09-12, 00:00 authored by Keitaro Ikejiri, Fumiya Ishizaka, Katsuhiro Tomioka, Takashi FukuiWe present a bidirectional growth mode of InP nanowires
grown by
selective-area metalorganic vapor-phase epitaxy (SA-MOVPE).
We studied the effect of the supply ratio of DEZn ([DEZn]) on InP
grown structure morphology and crystal structures during the SA-MOVPE.
Two growth regimes were observed in the investigated range of the
[DEZn] on an InP(111)B substrate. At low [DEZn], grown structures
formed tripod structures featuring three nanowires branched toward
the [111]A directions. At high [DEZn], we obtained hexagonal pillar-type
structures vertically grown on the (111)B substrate. These results
show that the growth direction changes from [111]A to [111]B as [DEZn]
is increased. We propose a growth mechanism based on the correlation
between the incident facet of rotational twins and the shapes of the
grown structures. Our results bring us one step closer to controlling
the direction of nanowires on a Si substrate that has a nonpolar nature.
They can also be applied to the development of InP nanowire devices.