Bias-Switchable Photoconductance in a Nanoscale Ge Photodetector Operated in the Negative Differential Resistance Regime

Recent advances in nanoscale optoelectronic Ge devices have exposed their enormous potential for highly sensitive visible and near-infrared CMOS compatible photodetectors. In this respect, Ge nanowires, due to their nanocylinder resonator shape, have established themselves as a promising platform to significantly enhance the performance of photodetectors. Here, we present a highly sensitive polarity switchable Ge nanowire photodetector embedded in a monolithic and single-crystalline metal–semiconductor nanowire heterostructure. Operated in the negative differential resistance regime, effective dark current suppression up to a factor of 100 is achieved. In this configuration, a bias-switchable positive and negative photoconductance is observed and systematically analyzed. Further, a remarkably strong polarization anisotropy with a maximum TM/TE ratio of 33 was found for positive photoconductance. Most notably, presenting a Ge-based photodetector combining switchable photoconductance and effective dark current suppression may pave the way for advanced applications, including highly resolved imaging and light effect transistors.