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Band Alignment for Rectification and Tunneling Effects in Al2O3 Atomic-Layer-Deposited on Back Contact for CdTe Solar Cell

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journal contribution
posted on 23.09.2016, 00:00 by Yantao Su, Chao Xin, Yancong Feng, Qinxian Lin, Xinwei Wang, Jun Liang, Jiaxin Zheng, Yuan Lin, Feng Pan
The present work intends to explain why ultrathin Al2O3 atomic-layer-deposited (ALD) on the back contact with rectification and tunneling effects can significantly improve the performance of CdTe solar cells in our previous work [Liang, J.; et al. Appl. Phys. Lett. 2015, 107, 013907]. Herein, we further study the mechanism through establishing the interfacial energy band diagram configuration of the ALD Al2O3/​CuxTe by experiment of X-ray photoelectron spectroscopy and first-principles calculations and conclude to find the band alignment with optimized layer thickness (about 1 nm ALD Al2O3) as the key factor for rectification and tunneling effects.

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