posted on 2023-12-27, 17:34authored byChuangye Yao, Dinghua Bao
Interface engineering could significantly modulate the
performance
of resistive switching memories. Here, Au nanocrystals (NCs) are introduced
to decorate the electrode interface of the spinel cobalt oxide (Co3O4)-based memory device. Compared to the pure Co3O4-based device, the device with Au NCs showed
excellent bipolar resistive switching behaviors, uniform initialization
voltage, concentrated switching voltage of the Set and Reset processes,
reliable cycle-to-cycle switching endurance, and multi-magnetization
performance. Based on the analysis of fitting current–voltage
(I–V) curves and temperature-dependent
resistance, it is demonstrated that Schottky emission conduction and
Ohmic conduction are dominated at a high resistance state (HRS) and
a low resistance state (LRS), respectively. Improvement in the resistive
switching performance can be attributed to the formation of confined
oxygen vacancies conductive filaments, where Au NCs create an enhancement
of the local electric field, which can efficiently guide the direction
of the growth and rupture of conductive filaments. The physical relevancy
between resistive switching and multi-magnetization involves in the
creation and annihilation of oxygen vacancies, associated with the
reversible conversion of the cation valence state (Co2+ and Co3+). The present study provides a flexible path
for enhancing resistive switching and multifunctional electromagnetic
device applications.