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Download fileAtomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer
journal contribution
posted on 2022-04-11, 15:11 authored by Bingyao Liu, Qi Chen, Zhaolong Chen, Shenyuan Yang, Jingyuan Shan, Zhetong Liu, Yue Yin, Fang Ren, Shuo Zhang, Rong Wang, Mei Wu, Rui Hou, Tongbo Wei, Junxi Wang, Jingyu Sun, Jinmin Li, Zhongfan Liu, Zhiqiang Liu, Peng GaoRemote
heteroepitaxy is known to yield semiconductor films with
better quality. However, the atomic mechanisms in systems with large
mismatches are still unclear. Herein, low-strain single-crystalline
nitride films are achieved on highly mismatched (∼16.3%) sapphire
via graphene-assisted remote heteroepitaxy. Because of a weaker interface
potential, the in-plane compressive strain at the interface releases
by 30%, and dislocations are prevented. Meanwhile, the lattice distortions
in the epilayer disappear when the structure climbs over the atomic
steps on substrates because graphene renders the steps smooth. In
this way, the density of edge dislocations in as-grown nitride films
reduces to the same level as that of the screw dislocations, which
is rarely observed in heteroepitaxy. Further, the indium composition
in InxGa1–xN/GaN multiquantum wells increases to ∼32%, enabling
the fabrication of a yellow light-emitting diode. This study demonstrates
the advantages of remote heteroepitaxy for bandgap tuning and opens
opportunities for photoelectronic and electronic applications.
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yield semiconductor filmscrystalline nitride filmsweaker interface potentialplane compressive strainassisted remote heteroepitaxyremote heteroepitaxyinterface releasesstrain singlestrain alleviationyellow lightx </study demonstratesstructure climbsstill unclearsteps smoothrarely observedopens opportunitieslattice distortionslarge mismatchesindium compositiongraphene rendersepilayer disappearemitting diodeelectronic applicationsdislocation reductionbetter qualitybandgap tuningatomic stepsatomic mechanismsatomic mechanism30 %,1 –<