Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)2)4 and Te(Si(CH3)3)2 with Ammonia Coinjection
journal contribution
posted on 2020-06-11, 20:04 authored by Yoon Kyeung Lee, Eui-Sang Park, Chanyoung Yoo, Woohyun Kim, Jeong Woo Jeon, Manick Ha, Cheol Seong HwangThis study introduces
the synthesis of conformal crystalline SnTe
films through atomic layer deposition (ALD) using the sequential injection
of Sn(N(CH3)2)4 and Te(Si(CH3)3)2 with NH3 coinjection.
The one to one stoichiometry of the deposited SnTe films indicates
the conversion of Sn(IV) to Sn(II) and the removal of Te(0) during
the deposition process as a result of the redox reaction between Sn(IV)
and Te2–. NH3 coinjection with Te(Si(CH3)3)2 facilitated the uniform growth
of SnTe films even at high temperatures (>130 °C), where the
growth was severely retarded in the absence of NH3 due
to the desorption of the precursors from the substrates. The self-limiting
growth rates of 93 and 150 ng·cm–2·cycle–1 (1.5 and 2.4 Å·cycle–1) were obtained at 90 and 130 °C, respectively. The process
produced high-purity, crystalline-as-deposited SnTe films with a face-centered
cubic structure.
