Anisotropic Transport Property of Antimonene MOSFETs
journal contributionposted on 29.04.2020, 13:39 by Yiheng Yin, Chen Shao, Can Zhang, Zhaofu Zhang, Xuewei Zhang, John Robertson, Yuzheng Guo
As silicon-based electronic devices rapidly reach their scaling limits, novel two-dimensional (2D) semiconductors, such as graphene nanoribbon, transition metal dichalcogenides, and phosphorene, are becoming promising channel materials. Antimonene has been proved suitable for ultrascaled field-effect transistors (FETs) benefiting from its superior semiconducting properties. Considering that antimonene shows different effective mass from 0° (zigzag) to 30° (armchair), we have calculated the anisotropic transport property of monolayer (ML) antimonene metal–oxide–semiconductor FET (MOSFETs), including on-state current, subthreshold swing, effective mass, intrinsic delay time, and power dissipation. Encouragingly, 0° (zigzag) and 19.1° directions ML antimonene MOSFETs with 4 nm gate length and 1 nm underlap achieve the International Technology Roadmap for Semiconductors (ITRS) high-performance (HP) goal in 2028. The performance of ML antimonene MOSFETs still can fulfill the ITRS HP goal, when the spin–orbit coupling effect is considered. The magnitude of on-state currents in all calculations generally varies inversely with the effective mass. Therefore, we predict that other transmission directions with effective masses between 0.291 and 0.388 m0 can also achieve the ITRS HP goal, which enables antimonene to be a promising channel material.
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4 nm gate lengthsubthreshold swingInternational Technology Roadmaptransition metal dichalcogenidespower dissipation1 nm underlaptransmission directionsAnisotropic Transport Propertyanisotropic transport propertyAntimonene MOSFETszigzag0.388 m 0graphene nanoribbonchannel materialdelay timeML antimonene MOSFETssemiconducting propertiesultrascaled field-effect transistorschannel materialsITRS HP goalon-state currents