posted on 2020-08-07, 10:43authored byJing-Kai Qin, Feichi Zhou, Jingli Wang, Jiewei Chen, Cong Wang, Xuyun Guo, Shouxin Zhao, Yi Pei, Liang Zhen, Peide D. Ye, Shu Ping Lau, Ye Zhu, Cheng-Yan Xu, Yang Chai
Hardware
implementation of an artificial neural network requires
neuromorphic devices to process information with low energy consumption
and high heterogeneity. Here we demonstrate an electrolyte-gated synaptic
transistor (EGT) based on a trigonal selenium (t-Se)
nanosheet. Due to the intrinsic low conductivity of the Se channel,
the t-Se synaptic transistor exhibits ultralow energy
consumption, less than 0.1 pJ per spike. More importantly, the intrinsic
low symmetry of t-Se offers a strong anisotropy along
its c- and a-axis in electrical
conductance with a ratio of up to 8.6. The multiterminal EGT device
exhibits an anisotropic response of filtering behavior to the same
external stimulus, which enables it to mimic the heterogeneous signal
transmission process of the axon–multisynapse biostructure
in the human brain. The proof-of-concept device in this work represents
an important step to develop neuromorphic electronics for processing
complex signals.