Anisotropic Phonon Bands in H‑Bonded Molecular Crystals: The Instructive Case of α‑Quinacridone

Phonons play a crucial role in the thermodynamic and transport properties of solid materials. Nevertheless, rather little is known about phonons in organic semiconductors. Thus, we employ highly reliable quantum mechanical calculations for studying the phonons in the α-polymorph of quinacridone. This material is particularly interesting, as it has highly anisotropic properties with distinctly different bonding types (H-bonding, π-stacking, and dispersion interactions) in different spatial directions. By calculating the overlaps of modes in molecular quinacridone and the α-polymorph, we associate Γ-point phonons with molecular vibrations to get a first impression of the impact of the crystalline environment. The situation becomes considerably more complex when analyzing phonons in the entire 1st Brillouin zone, where, due to the low symmetry of α-quinacridone, a multitude of avoided band crossings occur. At these, the character of the phonon modes typically switches, as can be inferred from mode participation ratios and mode longitudinalities. Notably, avoided crossings are observed not only as a function of the length but also as a function of the direction of the phonon wave vector. Analyzing these avoided crossings reveals how it is possible that the highest frequency acoustic band is always the one with the largest longitudinality, although longitudinal phonons in different crystalline directions are characterized by fundamentally different molecular displacements. The multiple avoided crossings also give rise to a particularly complex angular dependence of the group velocities, but combining the insights from the various studied quantities still allows drawing general conclusions, e.g., on the relative energetics of longitudinal vs transverse deformations (i.e., compressions and expansions vs slips of neighboring molecules). They also reveal how phonon transport in α-quinacridone is impacted by the reinforcing H-bonds and by π-stacking interactions (resulting from a complex superposition of van der Waals, charge penetration, and exchange repulsion).