posted on 2019-05-04, 00:00authored byZhenyu Yang, Mingyang Wei, Oleksandr Voznyy, Petar Todorovic, Mengxia Liu, Rafael Quintero-Bermudez, Peining Chen, James Z. Fan, Andrew H. Proppe, Li Na Quan, Grant Walters, Hairen Tan, Je-Wei Chang, U-Ser Jeng, Shana O. Kelley, Edward H. Sargent
Metal halide perovskites exhibit
outstanding optoelectronic properties:
superior charge carrier mobilities, low densities of deep trap states,
high photoluminescence quantum yield, and wide color tunability. The
introduction of dopant ions provides pathways to manipulate the electronic
and chemical features of perovskites. In metal halide perovskites
ABX3, where A is a monovalent cation (e.g., methylammonium
(MA+), Cs+), B is the divalent metal ion(s)
(e.g., Pb2+, Sn2+), and X is the halide group
(e.g., Cl–, Br–, or I–), the isovalent exchange of A- and X-site ions has been widely accomplished;
in contrast, strategies to exchange B-site cations are underexamined.
The activation energies for vacancy-mediated diffusion of B-site cations
are much higher than those for A- and X-sites, leading to slow doping
processes and low doping ratios. Herein we demonstrate a new method
that exchanges B-site cations in perovskites. We design a series of
metal carboxylate solutions that anchor on the perovskite surface,
allowing fast and efficient doping of B-sites with both homovalent
and heterovalent cations (e.g., Sn2+, Zn2+,
Bi3+) at room temperature. The doping process in the reduced-dimensional
perovskites is complete within 1 min, whereas a similar reaction only
leads to the surface attachment of dopant ions in three-dimensional
structures. We offer a model based on ammonium extraction and surface
ion-pair substitution.