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All-Epitaxial Integration of Long-Wavelength Infrared Plasmonic Materials and Detectors for Enhanced Responsivity
journal contribution
posted on 2020-07-09, 19:35 authored by Leland Nordin, Abhilasha Kamboj, Priyanka Petluru, Eric Shaner, Daniel WassermanInfrared
detectors using monolithically integrated doped semiconductor
“designer metals” are proposed and experimentally demonstrated.
We leverage the “designer metal” groundplanes to form
resonant cavities with enhanced absorption tuned across the long-wave
infrared (LWIR). Detectors are designed with two target absorption
enhancement wavelengths: 8 and 10 μm. The core of our detectors
are quantum-engineered LWIR type-II superlattice p-i-n detectors with
total thicknesses of only 1.42 and 1.80 μm for the 8 and 10
μm absorption enhancement devices, respectively. Our 8 and 10
μm structures show peak external quantum efficiencies of 45
and 27%, which are 4.5× and 2.7× enhanced, respectively,
compared to control structures. We demonstrate the clear advantages
of this detector architecture, both in terms of ease of growth/fabrication
and enhanced device performance. The proposed architecture is absorber-
and device-structure agnostic, much thinner than state-of-the-art
LWIR T2SLs, and offers the opportunity for the integration of low
dark current LWIR detector architectures for significant enhancement
of IR detectivity.
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10 μ m absorption enhancement devicesdevice-structure agnostic10 μ mDetectorcontrol structuresIR detectivityEnhanced Responsivitydesignerquantum efficienciesAll-Epitaxial Integrationdetector architecture1.80 μ mdevice performancePlasmonic MaterialsLWIR detector architecturesLWIR T 2SLs10 μ m structures show peaktarget absorption enhancement wavel...quantum-engineered LWIR type-II sup...
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