posted on 2024-02-21, 14:33authored byZhi-Hong Zhang, Shan-Shan Yan, Yu-Long Chen, Zhen-Dong Lian, Ai Fu, You-Chao Kong, Lin Li, Shi-Chen Su, Kar-Wei Ng, Zhi-Peng Wei, Hong-Chao Liu, Shuang-Peng Wang
The rapid evolution
of the Internet of Things has engendered
increased
requirements for low-cost, self-powered UV photodetectors. Herein,
high-performance self-driven UV photodetectors are fabricated by designing
asymmetric metal–semiconductor–metal structures on the
high-quality large-area CsCu2I3 microwire arrays.
The asymmetrical depletion region doubles the photocurrent and response
speed compared to the symmetric structure device, leading to a high
responsivity of 233 mA/W to 355 nm radiation. Notably, at 0 V bias,
the asymmetric device produces an open-circuit voltage of 356 mV and
drives to a short-circuit current of 372 pA; meanwhile, the switch
ratio (Iph/Idark) reaches up to 103, indicating its excellent potential
for detecting weak light. Furthermore, the device maintains stable
responses throughout 10000 UV-light switch cycles, with negligible
degradation even after 90-day storage in air. Our work establishes
that CsCu2I3 is a good candidate for self-powered
UV detection and thoroughly demonstrates its potential as a passive
device.