A Sensitive Visible Light Photodetector Using Cobalt-Doped Zinc Ferrite Oxide Thin Films
journal contributionposted on 29.01.2021, 20:04 by Pin-Hung Chung, Chia-Tung Kuo, Tzu-Hsuan Wang, You-Yan Lu, Chao-I Liu, Tri-Rung Yew
In this study, a highly sensitive trilayer photodetector using Co-doped ZnFe2O4 thin films annealed at 400 °C was synthesized successfully. Trilayer-photodetector devices with a film stack of 5 at % Co-doped-zinc-ferrite-thin-film/indium-tin-oxide on p+-Si substrates were fabricated by radio-frequency sputtering. The absorbance spectra, photoluminescence spectra, transmission electron microscopy images, and I–V characteristics under various conditions were comprehensively investigated. The outstanding performance of trilayer-photodector devices was measured, including a high photosensitivity of 181 and a fast photoresponse time with a rise time of 10.6 ms and fall time of 9.9 ms under 630 nm illumination. Therefore, the Co-doped ZnFe2O4 thin film is favorable for potential photodetector applications in visible light regions.
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absorbance spectrafilms annealedCo-doped ZnFe 2 O 4Trilayer-photodetector devicestrilayer-photodector devicesSensitive Visible Light Photodetectortrilayer photodetectorSi substratesCobalt-Doped Zinc Ferrite Oxiderise timephotodetector applicationslight regionstransmission electron microscopy images10.6 msfall timephotoluminescence spectrafilm stackphotoresponse time9.9 ms630 nm illumination