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Download fileALD-Developed Plasmonic Two-Dimensional Au–WO3–TiO2 Heterojunction Architectonics for Design of Photovoltaic Devices
journal contribution
posted on 06.03.2018, 00:00 authored by Mohammad Karbalaei Akbari, Zhenyin Hai, Zihan Wei, Christophe Detavernier, Eduardo Solano, Francis Verpoort, Serge ZhuiykovElectrically responsive
plasmonic devices, which benefit from the privilege of surface plasmon
excited hot carries, have supported fascinating applications in the
visible-light-assisted technologies. The properties of plasmonic devices
can be tuned by controlling charge transfer. It can be attained by
intentional architecturing of the metal–semiconductor (MS)
interfaces. In this study, the wafer-scaled fabrication of two-dimensional
(2D) TiO2 semiconductors on the granular Au metal substrate
is achieved using the atomic layer deposition (ALD) technique. The
ALD-developed 2D MS heterojunctions exhibited substantial enhancement
of the photoresponsivity and demonstrated the improvement of response
time for 2D Au–TiO2-based plasmonic devices under
visible light illumination. To circumvent the undesired dark current
in the plasmonic devices, a 2D WO3 nanofilm (∼0.7
nm) was employed as the intermediate layer on the MS interface to
develop the metal–insulator–semiconductor (MIS) 2D heterostructure.
As a result, 13.4% improvement of the external quantum efficiency
was obtained for fabricated 2D Au–WO3–TiO2 heterojunctions. The impedancometry measurements confirmed
the modulation of charge transfer at the 2D MS interface using MIS
architectonics. Broadband photoresponsivity from the UV to the visible
light region was observed for Au–TiO2 and Au–WO3–TiO2 heterostructures, whereas near-infrared
responsivity was not observed. Consequently, considering the versatile
nature of the ALD technique, this approach can facilitate the architecturing
and design of novel 2D MS and MIS heterojunctions for efficient plasmonic
devices.