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Wafer-Scale and Wrinkle-Free Epitaxial Growth of Single-Orientated Multilayer Hexagonal Boron Nitride on Sapphire

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posted on 27.04.2016 by A-Rang Jang, Seokmo Hong, Chohee Hyun, Seong In Yoon, Gwangwoo Kim, Hu Young Jeong, Tae Joo Shin, Sung O. Park, Kester Wong, Sang Kyu Kwak, Noejung Park, Kwangnam Yu, Eunjip Choi, Artem Mishchenko, Freddie Withers, Kostya S. Novoselov, Hyunseob Lim, Hyeon Suk Shin
Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA′ stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.

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