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Solution-Processable 2D Polymer/Graphene Oxide Heterostructure for Intrinsic Low-Current Memory Device

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journal contribution
posted on 09.11.2020, 06:03 by Xiaojing Wang, Yuhang Yin, Mengya Song, Heshan Zhang, Zhengdong Liu, Yueyue Wu, Yuanbo Chen, Mustafa Eginligil, Shiming Zhang, Juqing Liu, Wei Huang
Suppressing the operating current in resistive memory devices is an effective strategy to minimize their power consumption. Herein, we present an intrinsic low-current memory based on two-dimensional (2D) hybrid heterostructures consisting of partly reduced graphene oxide (p-rGO) and conjugated microporous polymer (CMP) with the merits of being solution-processed, large-scale, and well patterned. The device with the heterostructure of p-rGO/CMP sandwiched between highly reduced graphene oxide (h-rGO) and aluminum electrodes exhibited rewritable and nonvolatile memory behavior with an ultralow operating current (∼1 μA) and efficient power consumption (∼2.9 μW). Moreover, the on/off current ratio is over 103, and the retention time is up to 8 × 103 s, indicating the low misreading rate and high stability of data storage. So far, the value of power is about 10 times lower than those of the previous GO-based memories. The bilayer architecture provides a promising approach to construct intrinsic low-power resistive memory devices.