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Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications

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journal contribution
posted on 23.12.2016, 00:00 by Pulikanti Guruprasad Reddy, Satyendra Prakash Pal, Pawan Kumar, Chullikkattil P. Pradeep, Subrata Ghosh, Satinder K. Sharma, Kenneth E. Gonsalves
The present report demonstrates the potential of a polyarylenesulfonium polymer, poly­[methyl­(4-(phenylthio)-phenyl)­sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully.

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