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Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications

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journal contribution
posted on 23.12.2016 by Pulikanti Guruprasad Reddy, Satyendra Prakash Pal, Pawan Kumar, Chullikkattil P. Pradeep, Subrata Ghosh, Satinder K. Sharma, Kenneth E. Gonsalves
The present report demonstrates the potential of a polyarylenesulfonium polymer, poly­[methyl­(4-(phenylthio)-phenyl)­sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully.

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