Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications
journal contributionposted on 23.12.2016, 00:00 by Pulikanti Guruprasad Reddy, Satyendra Prakash Pal, Pawan Kumar, Chullikkattil P. Pradeep, Subrata Ghosh, Satinder K. Sharma, Kenneth E. Gonsalves
Any type of content formally published in an academic journal, usually following a peer-review process.
The present report demonstrates the potential of a polyarylenesulfonium polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully.