Metal-Free, Single-Polymer Device Exhibits Resistive Memory Effect
journal contributionposted on 23.12.2013 by Unnat S. Bhansali, Mohd A. Khan, Dongkyu Cha, Mahmoud N. AlMadhoun, Ruipeng Li, Long Chen, Aram Amassian, Ihab N. Odeh, Husam N. Alshareef
Any type of content formally published in an academic journal, usually following a peer-review process.
All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal–PEDOT:PSS–metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>103), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months).