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Metal-Free, Single-Polymer Device Exhibits Resistive Memory Effect

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journal contribution
posted on 23.12.2013 by Unnat S. Bhansali, Mohd A. Khan, Dongkyu Cha, Mahmoud N. AlMadhoun, Ruipeng Li, Long Chen, Aram Amassian, Ihab N. Odeh, Husam N. Alshareef
All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal–PEDOT:PSS–metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>103), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months).

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