Clear Experimental Demonstration of Hole Gas Accumulation in Ge/Si Core–Shell Nanowires
journal contributionposted on 22.12.2015 by Naoki Fukata, Mingke Yu, Wipakorn Jevasuwan, Toshiaki Takei, Yoshio Bando, Wenzhuo Wu, Zhong Lin Wang
Any type of content formally published in an academic journal, usually following a peer-review process.
Selective doping and band-offset in germanium (Ge)/silicon (Si) core–shell nanowire (NW) structures can realize a type of high electron mobility transistor structure in one-dimensional NWs by separating the carrier transport region from the impurity-doped region. Precise analysis, using Raman spectroscopy of the Ge optical phonon peak, can distinguish three effects: the phonon confinement effect, the stress effect due to the heterostructures, and the Fano effect. The Fano effect is the most important to demonstrate hole gas accumulation in Ge/Si core–shell NWs. Using these techniques, we obtained conclusive evidence of the hole gas accumulation in Ge/Si core–shell NWs. The control of hole gas concentration can be realized by changing the B-doping concentration in the Si shell.