Syntheses, Structures, Physical Properties, and Theoretical Studies of CeMxOS (M = Cu, Ag; x ≈ 0.8) and CeAgOS
figureposted on 02.10.2006, 00:00 by George H. Chan, Bin Deng, Mariana Bertoni, John R. Ireland, Mark C. Hersam, Thomas O. Mason, Richard P. Van Duyne, James A. Ibers
Black single crystals of the two nonstoichiometric cerium coinage-metal oxysulfide compounds CeCuxOS and CeAgxOS (x ≈ 0.8) have been prepared by the reactions of Ce2S3 and CuO or Ag2O at 1223 or 1173 K, respectively. A black powder sample of CeAgOS has been prepared by the stoichiometric reaction of Ce2S3, CeO2, Ag2S, and Ag at 1073 K. These isostructural materials crystallize in the ZrSiCuAs structure type with two formula units in the tetragonal space group P4/nmm. Refined crystal structure results and chemical analyses provide evidence that the previously known anomalously small unit-cell volume of LnCuOS for Ln = Ce (Ln = rare-earth metal) is the result of Cu vacancies and the concomitant presence of both Ce3+ and Ce4+. Both CeCu0.8OS and CeAgOS are paramagnetic with μeff values of 2.13(6) and 2.10(1) μB, respectively. CeCu0.8OS is a p-type semiconductor with a thermal activation energy Ea = 0.22 eV, σelectrical = 9.8(1) 10-3 S/cm at 298 K, and an optical band gap Eg < 0.73 eV. CeAgOS has conductivity σconductivity = 0.16(4) S/cm and an optical band gap Eg = 0.71 eV at 298 K. Theoretical calculations with an on-site Coulomb repulsion parameter indicate that the Ce 4f states are fully spin-polarized and are not localized in CeCuOS, CeCu0.75OS, or CeAgOS. Calculated band gaps for CeCu0.75OS and CeAgOS are 0.6 and 0.8 eV, respectively.