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Transmission Electron Microscopy and High-Resolution Electron Microscopy Study of YNi2B2C Thin Film on Y2O3-Buffered MgO

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posted on 09.03.2004, 00:00 by G. H. Cao, P. Simon, U. Krämer, S. C. Wimbush, B. Holzapfel
An YNi2B2C thin film deposited on an Y2O3-buffered (001) MgO substrate by pulsed laser deposition has been investigated by X-ray diffraction, transmission electron microscopy (TEM), and high-resolution electron microscopy. Cross-sectional TEM analyses show that the YNi2B2C film grows in the [001] direction while the Y2O3 buffer layer exhibits columnar growth in the [001] and [111] directions on the (001) MgO substrate, with the growth in the [001] direction being preferred. The orientation relationships of the YNi2B2C film, Y2O3 buffer layer, and MgO substrate were obtained. The primary orientation relationship YNi2B2C(001)[110] || Y2O3(001)[100] || MgO(001)[100], evident from X-ray analyses, was able to be confirmed in the TEM study. A hexagonal impurity phase Y0.915Ni4.12B with lattice parameters a = 1.491 nm and c = 0.692 nm was identified at the interface between the Y2O3 buffer layer and the YNi2B2C thin film.

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